FDG6301N fet equivalent, dual n-channel digital fet.
* 25 V, 0.22 A Continuous, 0.65 A Peak
RDS(ON) = 4 W @ VGS = 4.5 V RDS(ON) = 5 W @ VGS = 2.7 V
* Very Low Level Gate Drive Requirements Allowing Direct
Operat.
as a replacement for bipolar digital transistors and small signal MOSFETs.
Features
* 25 V, 0.22 A Continuous, 0.65 .
These dual N−Channel logic level enhancement mode field effect
transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device.
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